LOW-TEMPERATURE ANNEALING BEHAVIOR OF GAAS IMPLANTED WITH BE

被引:20
作者
ANDERSON, CL
DUNLAP, HL
机构
[1] Hughes Research Laboratories, Malibu
关键词
D O I
10.1063/1.91027
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ion implantation of Be into GaAs, followed by annealing at temperatures above 475°C, produces layers with strong p-type conductivity and high hole mobility. Maximum electrical activation of the Be is obtained by 550°C. Be appears to be the only dopant in GaAs which can be electrically activated at such low temperatures following implantation. At temperatures in the range 500-630°C, satisfactory electrical results can be obtained by annealing in argon or vacuum without encapsulation. Little change in the electrical properties occurs for subsequent encapsulated annealing at temperatures up to 800°C for the fluences used.
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页码:178 / 180
页数:3
相关论文
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