PHOTOLUMINESCENCE STUDY OF NATIVE DEFECTS IN ANNEALED GAAS

被引：34

作者：

CHATTERJEE, PK

VAIDYANATHAN, KV

DURSCHLAG, MS

STREETMAN, BG

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

SOLID STATE COMMUNICATIONS | 1975年 / 17卷 / 11期

关键词：

D O I：

10.1016/0038-1098(75)90617-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1421 / 1424

页数：4

共 13 条

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[8] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

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[9] OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY [J].

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