COMPARISON OF GAAS DEVICE APPROACHES FOR ULTRAHIGH-SPEED VLSI

被引：38

作者：

EDEN, RC ^{[1
]}

机构：

[1] ROCKWELL INT,ANAHEIM,CA 92803

来源：

PROCEEDINGS OF THE IEEE | 1982年 / 70卷 / 01期

关键词：

D O I：

10.1109/PROC.1982.12225

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：5 / 12

页数：8

相关论文

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