THE PERMEABLE BASE TRANSISTOR AND ITS APPLICATION TO LOGIC-CIRCUITS

[1] Alley G. D., 1980, International Electron Devices Meeting. Technical Digest, P608

[2] ALLEY GD, 1972, THESIS U KANSAS LAWR

[3] ALLEY GD, 1979, 7TH P BIEN CORN C AC, P43

[4] Bozler C. O., 1979, IEEE INT ELECTRON DE, P384

[5] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[6] BOZLER CO, 1979, 7TH P BIEN CORN C AC, P33

[7] ELECTRON-BEAM FABRICATION OF 80-A METAL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1976, 29 (09) : 596 - 598

[8] X-RAY-LITHOGRAPHY AT - 100-A LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1615 - 1619

[9] FABRICATION TECHNOLOGY FOR AN 80-PS NORMALLY-OFF GAAS-MESFET LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 489 - 493

[10] THRESHOLD VOLTAGES OF NORMALLY OFF MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) : 314 - &

[1] Alley G. D., 1980, International Electron Devices Meeting. Technical Digest, P608

[2] ALLEY GD, 1972, THESIS U KANSAS LAWR

[3] ALLEY GD, 1979, 7TH P BIEN CORN C AC, P43

[4] Bozler C. O., 1979, IEEE INT ELECTRON DE, P384

[5] FABRICATION AND NUMERICAL-SIMULATION OF THE PERMEABLE BASE TRANSISTOR [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1128 - 1141

[6] BOZLER CO, 1979, 7TH P BIEN CORN C AC, P33

[7] ELECTRON-BEAM FABRICATION OF 80-A METAL STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1976, 29 (09) : 596 - 598

[8] X-RAY-LITHOGRAPHY AT - 100-A LINEWIDTHS USING X-RAY MASKS FABRICATED BY SHADOWING TECHNIQUES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1615 - 1619

[9] FABRICATION TECHNOLOGY FOR AN 80-PS NORMALLY-OFF GAAS-MESFET LOGIC [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (05) : 489 - 493

[10] THRESHOLD VOLTAGES OF NORMALLY OFF MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (03) : 314 - &