FABRICATION TECHNOLOGY FOR AN 80-PS NORMALLY-OFF GAAS-MESFET LOGIC

被引：7

作者：

IDA, M

MIZUTANI, T

ASAI, K

UCHIDA, M

SHIMADA, K

ISHIDA, S

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 05期

关键词：

D O I：

10.1109/T-ED.1981.20371

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：489 / 493

页数：5

共 15 条

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[3]

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[4]

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[6]

HOUSTON TW, 1979, ISSCC DIG TECH PAPER, V22, P80

[7]

ISHIKAWA H, 1977, ISSCC DIG TECH PAPER, P200

[8]

MIZUTANI T, 1979, 1979 INT C SOL STAT, P33

[9]

MIZUTANI T, 1979, 1ST IEEE MTT S SPEC, P93

[10] PHOTOLUMINESCENCE MEASUREMENT OF ION-ETCHED GAAS SURFACE [J].

NAMBA, S ;

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