PHOTOLUMINESCENCE MEASUREMENT OF ION-ETCHED GAAS SURFACE

被引：11

作者：

NAMBA, S ^{[1
]}

KAWABE, M ^{[1
]}

KANZAKI, N ^{[1
]}

MASUDA, K ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.568536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：1348 / 1351

页数：4

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共 11 条

[1] THE PENETRATION OF POSITIVE IONS OF LOW ENERGY INTO ALLOYS AND COMPOSITION CHANGES PRODUCED IN THEM BY SPUTTERING
GILLAM, E
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 11 (1-2) : 55 - &
[2] HARRIS JS, 1971, 1ST P INT C ION IMPL, P439
[3] EFFECT OF HEAT TREATMENT ON 1.370 EV PHOTOLUMINESCENCE EMISSION BAND IN ZN-DOPED GAAS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4307 - &
[4] STUDY OF ION-BOMBARDMENT DAMAGE ON A GE (111) SURFACE BY LOW-ENERGY ELECTRON DIFFRACTION
JACOBSON, RL
WEHNER, GK
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2674 - &
[5] SPUTTERING YIELDS OF METALS FOR AR+ AND NE+ IONS WITH ENERGIES FROM 50 TO 600 EV
LAEGREID, N
WEHNER, GK
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (03) : 365 - &
[6] DEPTHS OF LOW-ENERGY ION BOMBARDMENT DAMAGE IN GERMANIUM
MACDONALD, RJ
HANEMAN, D
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1609 - +
[7] PICRAUX ST, 1973, 3RD P INT C ION IMPL, P641
[8] INVESTIGATION OF RF SPUTTER ETCHED SILICON SURFACES USING HELIUM ION BACKSCATTER
SACHSE, GW
MILLER, WE
GROSS, C
[J]. SOLID-STATE ELECTRONICS, 1975, 18 (05) : 431 - 435
[9] OPTICAL DETECTION OF SURFACE DAMAGE IN GAAS INDUCED BY ARGON ION IMPLANTATION
SELL, DD
MACRAE, AU
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (12) : 4929 - &
[10] VOOK FL, 1971, 2 INT C ION IMPL SEM, P141