REDISTRIBUTION OF BORON IN SILICON AFTER HIGH-TEMPERATURE PROTON IRRADIATION

被引：34

作者：

BARUCH, P

MONNIER, J

BLANCHARD, B

CASTAING, C

机构：

[1] IENS,GRP PHYS SOLIDES,TOUR 23,2 PL JUSSIEU,PARIS 5E,FRANCE

[2] CEN GRENOBLE,LETI,CTR TRI,BP 85,38041 GRENOBLE,FRANCE

[3] CEN GRENOBLE,SLAG EAPC,CTR TRI,BP 85,38041 GRENOBLE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1975年 / 26卷 / 03期

关键词：

D O I：

10.1063/1.88077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：77 / 80

页数：4

共 26 条

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[5] VACANCY ENHANCED DIFFUSION IN SILICON - EFFECTS OF IRRADIATION AND OF CHEMICAL IMPURITIES [J].

BARUCH, P ;

SAINTESPRIT, R ;

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PFISTER, JC .

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[6]

BARUCH P, 1974, P INT C LATTICE DEFE

[7]

BARUCH P, 1974, J PHYS PARIS SC5, V34, P131

[8]

BLANCHARD B, 1972, J RADIOANAL CHEM, V12, P5

[9]

CASTAING C, 1974, VIDE S171, P126

[10]

DIEUMEGARD D, 1973, MAR ANRT M SIMS US O

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