THE DEPENDENCE OF THRESHOLD VOLTAGE SCATTERING OF GAAS-MESFET ON ANNEALING METHOD

被引：23

作者：

EGAWA, T

SANO, Y

NAKAMURA, H

ISHIDA, T

KAMINISHI, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 01期

关键词：

D O I：

10.1143/JJAP.24.L35

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：L35 / L38

页数：4

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[1] IDDA M, 1984, 16TH INT C SOL STAT, P30
[2] SIOXNY CAPPED ANNEALING FOR SI-IMPLANTED GAAS
KUZUHARA, M
KOHZU, H
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 527 - 529
[3] DISLOCATIONS AS THE ORIGIN OF THRESHOLD VOLTAGE SCATTERINGS FOR GAAS-MESFET ON LEC-GROWN SEMI-INSULATING GAAS SUBSTRATE
MIYAZAWA, S
ISHII, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1057 - 1062
[4] NAKAMURA H, 1983, ISSCC DIG TECH PAP I, V26, P134
[5] A SIMPLIFIED CAPLESS ANNEALING GAAS FOR MESFET APPLICATIONS
PANDE, KP
AINA, OA
LAKHANI, AA
NAIR, VKR
OCONNOR, JM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) : 506 - 508
[6] ORIENTATION EFFECT REDUCTION THROUGH CAPLESS ANNEALING OF SELF-ALIGNED PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
SADLER, RA
EASTMAN, LF
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (09) : 865 - 867
[7] IMPROVED THRESHOLD VOLTAGE UNIFORMITY IN GAAS-MESFET USING HIGH-PURITY MOCVD-GROWN BUFFER LAYER AS A SUBSTRATE FOR ION-IMPLANTATION
SANO, Y
NAKAMURA, H
AKIYAMA, M
EGAWA, T
ISHIDA, T
KAMINISHI, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (05): : L290 - L292