DISLOCATIONS AS THE ORIGIN OF THRESHOLD VOLTAGE SCATTERINGS FOR GAAS-MESFET ON LEC-GROWN SEMI-INSULATING GAAS SUBSTRATE

被引：26

作者：

MIYAZAWA, S

ISHII, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 08期

关键词：

D O I：

10.1109/T-ED.1984.21660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1057 / 1062

页数：6

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