DIRECT OBSERVATION OF THE PRINCIPAL DEEP LEVEL (EL2) IN UNDOPED SEMI-INSULATING GAAS

被引：88

作者：

BROZEL, MR

GRANT, I

WARE, RM

STIRLAND, DJ

机构：

[1] CAMBRIDGE INSTRUMENTS,CAMBRIDGE CB1 3QH,ENGLAND

[2] PLESSEY RES CASWELL LTD,ALLEN CLARK RES CTR,TOWCESTER NN12 8EQ,NORTHANTS,ENGLAND

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 07期

关键词：

D O I：

10.1063/1.94019

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：610 / 612

页数：3

共 16 条

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[5] COMPENSATION MECHANISM IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS - IMPORTANCE OF MELT STOICHIOMETRY
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[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 949 - 955
[6] HOLMES DE, 1982, UNPUB 2ND P C SEM 3
[7] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026
[8] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04): : 593 - 637
[9] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS
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GATOS, HC
PARSEY, JM
WADA, K
KAMINSKA, M
WALUKIEWICZ, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344
[10] FSGO POINT-CHARGE MODELS - THEIR ACCURACY AND EXTENSION TO HIGHER GAUSSIANS
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HALL, GG
[J]. THEORETICA CHIMICA ACTA, 1981, 59 (03): : 281 - 290

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