DISLOCATIONS AS THE ORIGIN OF THRESHOLD VOLTAGE SCATTERINGS FOR GAAS-MESFET ON LEC-GROWN SEMI-INSULATING GAAS SUBSTRATE

被引：26

作者：

MIYAZAWA, S

ISHII, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 08期

关键词：

D O I：

10.1109/T-ED.1984.21660

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1057 / 1062

页数：6

相关论文

共 26 条

[21] INHOMOGENEOUS GAAS-FET THRESHOLD VOLTAGES RELATED TO DISLOCATION DISTRIBUTION
NANISHI, Y
ISHIDA, S
HONDA, T
YAMAZAKI, H
MIYAZAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L335 - L337
[22] Cathodoluminescent Studies of Laser Quality GaAs
Shaw, D. A.
Thornton, P. R.
[J]. JOURNAL OF MATERIALS SCIENCE, 1968, 3 (05) : 507 - 518
[23] CHARACTERIZATION OF ELECTRON TRAPS IN ION-IMPLANTED GAAS-MESFETS ON UNDOPED AND CR-DOPED LEC SEMI-INSULATING SUBSTRATES
SRIRAM, S
DAS, MB
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 586 - 592
[24] STENKENBORN A, 1981, J LUMINESCENCE 1, V24, P351
[25] CHARACTERIZATION OF DEEP LEVELS IN LEC GAAS CRYSTALS BY THE PHOTO-LUMINESCENCE TECHNIQUE
TAJIMA, M
OKADA, Y
[J]. PHYSICA B & C, 1983, 116 (1-3): : 404 - 408
[26] LOW-DOSE SI ION-IMPLANTATION INTO SEMI-INSULATING LEC GAAS
YAMAZAKI, H
HONDA, T
MIYAZAWA, S
[J]. ELECTRONICS LETTERS, 1981, 17 (21) : 817 - 819