LOW-DOSE SI ION-IMPLANTATION INTO SEMI-INSULATING LEC GAAS

被引：10

作者：

YAMAZAKI, H

HONDA, T

MIYAZAWA, S

机构：

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 21期

关键词：

D O I：

10.1049/el:19810570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：817 / 819

页数：3

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