SURFACE-STATES AT THE NORMAL-GAAS-SIO2 INTERFACE FROM CONDUCTANCE AND CAPACITANCE MEASUREMENTS

被引：24

作者：

STREEVER, RL

BRESLIN, JT

AHLSTROM, EH

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(80)90103-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：863 / 868

页数：6

共 19 条

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