INFLUENCE OF SEMICONDUCTOR-OXIDE INTERLAYER ON AC-BEHAVIOUR OF INSB MOS-CAPACITORS

被引：15

作者：

HEIME, A

PAGNIA, H

机构：

来源：

APPLIED PHYSICS | 1978年 / 15卷 / 01期

关键词：

D O I：

10.1007/BF00896894

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：79 / 84

页数：6

共 21 条

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