INTERPRETATION OF ELECTRICAL MEASUREMENTS ON GAAS-MOS SYSTEM

被引:37
作者
KOHN, E
HARTNAGEL, HL
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D O I
10.1016/0038-1101(78)90271-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:409 / 416
页数:8
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共 33 条
[1]   FIRST ANODIC-OXIDE GAAS MOSFETS BASED ON EASY TECHNOLOGICAL PROCESSES [J].
BAYRAKTAROGLU, B ;
KOHN, E ;
HARTNAGEL, HL .
ELECTRONICS LETTERS, 1976, 12 (02) :53-54
[2]   STABLE CHARGE STORAGE OF MAOS DIODES ON GAAS BY NEW ANODIC-OXIDATION [J].
BAYRAKTAROGLU, B ;
HANNAH, SJ ;
HARTNAGEL, HL .
ELECTRONICS LETTERS, 1977, 13 (02) :45-46
[3]   SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].
BERGLUND, CN .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+
[4]   DESCRIPTION OF SIO2-SI INTERFACE PROPERTIES BY MEANS OF VERY LOW FREQUENCY MOS CAPACITANCE MEASUREMENTS [J].
CASTAGNE, R ;
VAPAILLE, A .
SURFACE SCIENCE, 1971, 28 (01) :157-+
[5]  
CHANG CC, 1977, 4TH ANN C PHYS COMP
[6]  
COLQUHOUN A, UNPUBLISHED
[7]  
FORSTER JE, 1970, J ELECTROCHEM SOC, V117, P1410
[8]  
FORWARD KE, 1975, J PHYS E, P38
[9]  
FRITSCHE D, 1976, SPR M GERM PHYS SOC