UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES

被引：731

作者：

SPICER, WE

LINDAU, I

SKEATH, P

SU, CY

CHYE, P

机构：

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 44卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.44.420

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：420 / 423

页数：4

共 34 条

[1] CHEMICAL BONDING AND STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES [J].

ANDREWS, JM ;

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1975, 35 (01) :56-59

[2]

Brebrick R.F., 1975, TREATISE SOLID STATE, V2, P333

[3] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[4] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[5]

CHADI DJ, 1978, PHYS REV LETT, V41, P1962

[6] PHOTOEMISSION-STUDIES OF THE INITIAL-STAGES OF OXIDATION OF GASB AND INP [J].

CHYE, PW ;

SU, CY ;

LINDAU, I ;

GARNER, CM ;

PIANETTA, P ;

SPICER, WE .

SURFACE SCIENCE, 1979, 88 (2-3) :439-460

[7] SURFACE AND INTERFACE STATES OF GASB - PHOTOEMISSION STUDY [J].

CHYE, PW ;

SUKEGAWA, T ;

BABALOLA, IA ;

SUNAMI, H ;

GREGORY, P ;

SPICER, WE .

PHYSICAL REVIEW B, 1977, 15 (04) :2118-2126

[8] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SU, CY ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 18 (10) :5545-5559

[9] EVIDENCE FOR A NEW TYPE OF METAL-SEMICONDUCTOR INTERACTION ON GASB [J].

CHYE, PW ;

LINDAU, I ;

PIANETTA, P ;

GARNER, CM ;

SPICER, WE .

PHYSICAL REVIEW B, 1978, 17 (06) :2682-2684

[10] ADSORPTION OF CESIUM ON GALLIUM-ARSENIDE (110) [J].

DERRIEN, J ;

ARNAUDDAVITAYA, F .

SURFACE SCIENCE, 1977, 65 (02) :668-686

← 1 2 3 4 →