CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES

被引：147

作者：

BRILLSON, LJ ^{[1
]}

BACHRACH, RZ ^{[1
]}

BAUER, RS ^{[1
]}

MCMENAMIN, J ^{[1
]}

机构：

[1] XEROX CORP,RES CTR,PALO ALTO,CA 94304

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 42卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.42.397

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that the exchange reaction between Al and GaAs at the microscopic interface produces a charge redistribution in two stages which determines Schottky-barrier formation. © 1979 The American Physical Society.

引用

页码：397 / 401

页数：5

共 30 条

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[4]

BACHRACH RZ, 1978, 14TH P INT C PHYS SE

[5]

BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792

[6] CHEMICAL-REACTIONS AND LOCAL CHARGE REDISTRIBUTION AT METAL-CDS AND CDSE INTERFACES [J].

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[7] TRANSITION IN SCHOTTKY-BARRIER FORMATION WITH CHEMICAL REACTIVITY [J].

BRILLSON, LJ .

PHYSICAL REVIEW LETTERS, 1978, 40 (04) :260-263

[8]

BRILLSON LJ, 1978, 14TH P INT C PHYS SE

[9]

CHADI DJ, UNPUBLISHED

[10] SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS [J].

CHELIKOWSKY, JR ;

LOUIE, SG ;

COHEN, ML .

SOLID STATE COMMUNICATIONS, 1976, 20 (07) :641-644

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