GROWTH AND CHARACTERIZATION OF LARGE DIAMETER UNDOPED SEMI-INSULATING GAAS FOR DIRECT ION-IMPLANTED FET TECHNOLOGY

[1] AUCOIN TR, 1979, SOLID STATE TECHNOL, V22, P59

[2] Brice J. C., 1970, Journal of Crystal Growth, V7, P9, DOI 10.1016/0022-0248(70)90107-7

[3] DASH WC, 1957, J APPL PHYS, V28, P882

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] GRABMAIER BC, 1972, J CRYST GROWTH, V13, P635

[6] HAISTY RW, 1964, P INT C PHYSICS SEMI

[7] HENRY RL, 1977, I PHYS C SER B, V33, P28

[8] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026

[9] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[10] CHARACTERIZATION OF SEMI-INSULATING GAAS BY HALL, PHOTO-HALL, PHOTOCONDUCTIVITY, AND PHOTOMAGNETOELECTRIC MEASUREMENTS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 147 - 157

[1] AUCOIN TR, 1979, SOLID STATE TECHNOL, V22, P59

[2] Brice J. C., 1970, Journal of Crystal Growth, V7, P9, DOI 10.1016/0022-0248(70)90107-7

[3] DASH WC, 1957, J APPL PHYS, V28, P882

[4] GIBBONS JF, 1975, PROJECTED RANGE STAT

[5] GRABMAIER BC, 1972, J CRYST GROWTH, V13, P635

[6] HAISTY RW, 1964, P INT C PHYSICS SEMI

[7] HENRY RL, 1977, I PHYS C SER B, V33, P28

[8] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026

[9] HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[10] CHARACTERIZATION OF SEMI-INSULATING GAAS BY HALL, PHOTO-HALL, PHOTOCONDUCTIVITY, AND PHOTOMAGNETOELECTRIC MEASUREMENTS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (01) : 147 - 157