CHARACTERIZATION OF ELECTRON TRAPS IN ION-IMPLANTED GAAS-MESFETS ON UNDOPED AND CR-DOPED LEC SEMI-INSULATING SUBSTRATES

被引：25

作者：

SRIRAM, S ^{[1
]}

DAS, MB ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,MAT RES LAB,UNIVERSITY PK,PA 16802

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 06期

关键词：

D O I：

10.1109/T-ED.1983.21173

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：586 / 592

页数：7

共 21 条

[1] ELECTRICAL TRAPS IN GAAS MICROWAVE FETS
ADLERSTEIN, MG
[J]. ELECTRONICS LETTERS, 1976, 12 (12) : 297 - 298
[2] CHARACTERIZATION OF IMPLANTED AND ANNEALED VAPOR-PHASE EPITAXIAL GAAS
BHATTACHARYA, PK
RHEE, JK
OWEN, SJT
YU, JG
SMITH, KK
KOYAMA, RY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7224 - 7231
[3] Chang C. D., 1980, Semi-Insulating III-V Materials, P329
[4] LOW-FREQUENCY EMISSIONS FROM DEEP LEVELS IN GAAS-MESFETS
DAS, MB
GHOSH, PK
[J]. ELECTRONICS LETTERS, 1982, 18 (05) : 207 - 208
[5] MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299-K AND 105-K
DAS, MB
KIM, B
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 205 - 211
[6] MONOLITHIC MICROWAVE-AMPLIFIERS FORMED BY ION-IMPLANTATION INTO LEC GALLIUM-ARSENIDE SUBSTRATES
DRIVER, MC
WANG, SK
PRZYBYSZ, JX
WRICK, VL
WICKSTROM, RA
COLEMAN, ES
OAKES, JG
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 191 - 196
[7] GROWTH OF HIGH-PURITY SEMI-INSULATING BULK GAAS FOR INTEGRATED-CIRCUIT APPLICATIONS
FAIRMAN, RD
CHEN, RT
OLIVER, JR
CHEN, DR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 135 - 140
[8] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS
HOBGOOD, HM
ELDRIDGE, GW
BARRETT, DL
THOMAS, RN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) : 140 - 149
[9] EFFECTS OF ION-IMPLANTATION ON DEEP LEVELS IN GAAS
JERVIS, TR
WOODARD, DW
EASTMAN, LF
[J]. ELECTRONICS LETTERS, 1979, 15 (20) : 619 - 621
[10] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

← 1 2 3 →