LOW-FREQUENCY EMISSIONS FROM DEEP LEVELS IN GAAS-MESFETS

被引：12

作者：

DAS, MB ^{[1
]}

GHOSH, PK ^{[1
]}

机构：

[1] PENN STATE UNIV,DEPT ELECT ENGN,SOLID STATE DEVICE LAB,UNIVERSITY PK,PA 16802

来源：

关键词：

D O I：

10.1049/el:19820142

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：207 / 208

页数：2

共 6 条

[1] Chang C. D., 1980, Semi-Insulating III-V Materials, P329
[2] DAS M, 1981, IEEE ELECTRON DEVICE, V2, P210
[3] SUBSTRATE BIAS EFFECT ON ION-IMPLANTED GAAS-MESFETS
KITAHARA, K
NAKAI, K
SHIBATOMI, A
OHKAWA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L369 - L371
[4] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
MARTIN, GM
MITONNEAU, A
MIRCEA, A
[J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193
[5] UNDOPED SEMI-INSULATING LEC GAAS - A MODEL AND A MECHANISM
OLIVER, JR
FAIRMAN, RD
CHEN, RT
YU, PW
[J]. ELECTRONICS LETTERS, 1981, 17 (22) : 839 - 841
[6] SRIRAM S, 1981, SEP INT S GAAS REL C