ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS

被引：644

作者：

MARTIN, GM ^{[1
]}

MITONNEAU, A ^{[1
]}

MIRCEA, A ^{[1
]}

机构：

[1] LABS ELECTR & PHYS APPL,F-94450 LIMEIL BREVANNES,FRANCE

来源：

ELECTRONICS LETTERS | 1977年 / 13卷 / 07期

关键词：

D O I：

10.1049/el:19770140

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：191 / 193

页数：3

共 19 条

[1] NON-EXTRINSIC CONDUCTION IN SEMI-INSULATING GALLIUM-ARSENIDE [J].

ASHBY, A ;

ROBERTS, GG ;

ASHEN, DJ ;

MULLIN, JB .

SOLID STATE COMMUNICATIONS, 1976, 20 (01) :61-63

[2]

CHERN I, 1973, SOLID STATE ELECTRON, V16, P1481

[3] MAJORITY-CARRIER TRAPS IN NORMAL-TYPE AND PARA-TYPE EPITAXIAL GAAS [J].

HASEGAWA, F ;

MAJERFELD, A .

ELECTRONICS LETTERS, 1975, 11 (14) :286-288

[4]

HENRY CH, TO BE PUBLISHED

[5]

HURLE DJ, 1976, 6TH P INT C GAAS REL

[6] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

LANG, DV ;

CHO, AY ;

GOSSARD, AC ;

ILEGEMS, M ;

WIEGMANN, W .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564

[7] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

[8] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[9]

LANG DV, 1974, LATTICE DEFECTS SEMI, P581

[10] DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN SEMICONDUCTORS [J].

LEFEVRE, H ;

SCHULZ, M .

APPLIED PHYSICS, 1977, 12 (01) :45-53

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