NON-EXTRINSIC CONDUCTION IN SEMI-INSULATING GALLIUM-ARSENIDE

[1] INVESTIGATION OF VOLTAGE BREAKDOWN IN SEMI-INSULATING GAAS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 795 - &

[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[3] MULLIN JB, 1964, J PHYS CHEM SOLIDS, V26, P782

[4] STUDY OF LOCALIZED LEVELS IN SEMI-INSULATORS BY COMBINED MEASUREMENTS OF THERMALLY ACTIVATED OHMIC AND SPACE-CHARGE-LIMITED CONDUCTION [J]. PHYSICAL REVIEW, 1969, 180 (03): : 785 - +

[5] STUDY OF LOCALIZED LEVELS .2. MEANING OF TEMPERATURE-INDUCED CHANGES IN ACTIVATION ON ENERGIES FOR ELECTRICAL-CONDUCTION [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1578 - 1590

[6] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &

[7] SZE SM, PHYSICS SEMICONDUCTO, P20

[1] INVESTIGATION OF VOLTAGE BREAKDOWN IN SEMI-INSULATING GAAS [J]. SOLID-STATE ELECTRONICS, 1967, 10 (08) : 795 - &

[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[3] MULLIN JB, 1964, J PHYS CHEM SOLIDS, V26, P782

[4] STUDY OF LOCALIZED LEVELS IN SEMI-INSULATORS BY COMBINED MEASUREMENTS OF THERMALLY ACTIVATED OHMIC AND SPACE-CHARGE-LIMITED CONDUCTION [J]. PHYSICAL REVIEW, 1969, 180 (03): : 785 - +

[5] STUDY OF LOCALIZED LEVELS .2. MEANING OF TEMPERATURE-INDUCED CHANGES IN ACTIVATION ON ENERGIES FOR ELECTRICAL-CONDUCTION [J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1578 - 1590

[6] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J]. SOLID-STATE ELECTRONICS, 1968, 11 (06) : 599 - &

[7] SZE SM, PHYSICS SEMICONDUCTO, P20