ELECTRICAL TRAPS IN GAAS MICROWAVE FETS

[1] ASAI S, 1973, J JAPAN SOC APPL P S, V42, P71

[2] Bearse S. V., 1976, Microwaves, V15, P32

[3] FABRE E, 1970, CR ACAD SCI B PHYS, V270, P848

[4] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[6] Milnes A., 1973, DEEP IMPURITIES SEMI

[1] ASAI S, 1973, J JAPAN SOC APPL P S, V42, P71

[2] Bearse S. V., 1976, Microwaves, V15, P32

[3] FABRE E, 1970, CR ACAD SCI B PHYS, V270, P848

[4] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) : 1053 - 1066

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[6] Milnes A., 1973, DEEP IMPURITIES SEMI