MOBILITY AND CARRIER CONCENTRATION PROFILES IN ION-IMPLANTED LAYERS ON DOPED AND UNDOPED SEMI-INSULATING GAAS SUBSTRATES AT 299-K AND 105-K

被引：11

作者：

DAS, MB

KIM, B

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 02期

关键词：

D O I：

10.1109/T-ED.1982.20685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：205 / 211

页数：7

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