SIOXNY CAPPED ANNEALING FOR SI-IMPLANTED GAAS

被引：30

作者：

KUZUHARA, M ^{[1
]}

KOHZU, H ^{[1
]}

机构：

[1] NEC CORP,DIV LSI 2,NAKAHARA KU,KAWASAKI 211,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 05期

关键词：

D O I：

10.1063/1.94821

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：527 / 529

页数：3

共 12 条

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APPLIED PHYSICS LETTERS, 1982, 41 (08) :755-758

[8] STEADY-STATE THERMALLY ANNEALED GAAS WITH ROOM-TEMPERATURE-IMPLANTED SI [J].

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[10]

RAMILLER CL, 1978, SPR ECS M, P697

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