STEADY-STATE THERMALLY ANNEALED GAAS WITH ROOM-TEMPERATURE-IMPLANTED SI

被引：20

作者：

MASUYAMA, A

NICOLET, MA

GOLECKI, I

TANDON, JL

SADANA, DK

WASHBURN, J

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

[2] ROCKWELL INT,ELECTR RES CTR,THOUSAND OAKS,CA 91360

[3] CALTECH,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 09期

关键词：

D O I：

10.1063/1.91637

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：749 / 751

页数：3

共 14 条

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MULLER, H ;

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INADA, T ;

MAYER, JW .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :219-223

[2] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J].

EVANS, CA ;

DELINE, VR ;

SIGMON, TW ;

LIDOW, A .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293

[3] SELENIUM IMPLANTATION IN GAAS [J].

GAMO, K ;

INADA, T ;

KREKELER, S ;

MAYER, JW ;

EISEN, FH ;

WELCH, BM .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :213-217

[4] CONCENTRATION PROFILES OF BORON IMPLANTATIONS IN AMORPHOUS AND POLYCRYSTALLINE SILICON [J].

HOFKER, WK ;

OOSTHOEK, DP ;

KOEMAN, NJ ;

DEGREFTE, HAM .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 24 (04) :223-231

[5]

KAMALOV MN, 1978, SOV PHYS SEMICOND+, V12, P340

[6]

KENDALL DL, 1968, SEMICONDUCTORS SEMIM, V4, P177

[7]

KROGER FA, 1964, CHEM IMPERFECT CRYST, P703

[8]

KULAR SS, UNPUBLISHED

[9] ANODIC-OXIDATION OF GAAS AS A TECHNIQUE TO EVALUATE ELECTRICAL CARRIER CONCENTRATION PROFILES [J].

MULLER, H ;

EISEN, FH ;

MAYER, JW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :651-655

[10]

PETTIT HR, 1971, 10 I PHYS C SER, P290

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