XPS STUDY OF ANNEALED SIO2/GAAS INTERFACES

[1] GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE [J]. APPLIED PHYSICS LETTERS, 1975, 26 (07) : 371 - 372

[2] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +

[3] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &

[4] GAAS INVERSION-TYPE MIS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759

[5] KECK W, COMMUNICATION

[6] KUISL M, 1970, Z ANGEW PHYSIK, V28, P342

[7] LOSCHKE K, 1975, KRIST TECH, V10, pK45

[8] PERMEATION OF GASEOUS OXYGEN THROUGH VITREOUS SILICA [J]. NATURE, 1961, 191 (478) : 701 - &

[9] NETWORK OXYGEN-EXCHANGE DURING WATER DIFFUSION IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 777 - 784

[10] SHEKA JA, 1966, CHEM GALLIUM

[1] GLASS-SEALED GAAS-ALGAAS TRANSMISSION PHOTOCATHODE [J]. APPLIED PHYSICS LETTERS, 1975, 26 (07) : 371 - 372

[2] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +

[3] INFLUENCE OF IMPLANTATION TEMPERATURE AND SURFACE PROTECTION ON TELLURIUM IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1972, 21 (12) : 601 - &

[4] GAAS INVERSION-TYPE MIS TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759

[5] KECK W, COMMUNICATION

[6] KUISL M, 1970, Z ANGEW PHYSIK, V28, P342

[7] LOSCHKE K, 1975, KRIST TECH, V10, pK45

[8] PERMEATION OF GASEOUS OXYGEN THROUGH VITREOUS SILICA [J]. NATURE, 1961, 191 (478) : 701 - &

[9] NETWORK OXYGEN-EXCHANGE DURING WATER DIFFUSION IN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 777 - 784

[10] SHEKA JA, 1966, CHEM GALLIUM