CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE - ENCAPSULANT LAYERS FOR ANNEALING GALLIUM-ARSENIDE

被引：33

作者：

INADA, T

OHKUBO, T

SAWADA, S

HARA, T

NAKAJIMA, M

机构：

[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN

[2] MATSUSHITA ELECT IND CO LTD,CENT RES LAB,MORIGUCHI,OSAKA 570,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 09期

关键词：

D O I：

10.1149/1.2131709

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1525 / 1529

页数：5

相关论文

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