QUANTITATIVE DETECTION OF OXYGEN IN SILICON-NITRIDE ON SILICON

被引：53

作者：

HOLLOWAY, PH ^{[1
]}

STEIN, HJ ^{[1
]}

机构：

[1] SANDIA LABS,ALBUQUERQUE,NM 87115

来源：

关键词：

D O I：

10.1149/1.2132916

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：723 / 728

页数：6

共 13 条

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[2] CHANG CC, 1974, CHARACTERIZATION SOL, pCH20
[3] CHEMICAL-SHIFTS IN AUGER-ELECTRON SPECTRA FROM SILICON IN SILICON-NITRIDE
HOLLOWAY, PH
[J]. SURFACE SCIENCE, 1976, 54 (02) : 506 - 508
[4] OXIDATION OF SI AND GAAS IN AIR AT ROOM-TEMPERATURE
LUKES, F
[J]. SURFACE SCIENCE, 1972, 30 (01) : 91 - &
[5] MACGUIRE HG, 1972, J ELECTROCHEM SOC, V119, P791
[6] MILEK JT, 1971, HDB ELECTRONIC MAT 1, V3
[7] MILEK JT, 1972, HDB ELECTRONIC MAT 2, V6, P41
[8] NABER CT, 1973, 2ND INT S SIL MAT SC, P401
[9] PALMBERG PW, 1972, HDB AUGER ELECTRON S
[10] OPTICAL PROPERTIES OF SILICON-NITRIDE
PHILIPP, HR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (02) : 295 - 300