ANNEALING OF MG IMPLANTS IN GAAS USING INCOHERENT RADIATION

被引：19

作者：

BLUNT, RT ^{[1
]}

SZWEDA, R ^{[1
]}

LAMB, MSM ^{[1
]}

CULLIS, AG ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 11期

关键词：

D O I：

10.1049/el:19840309

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：444 / 446

页数：3

相关论文

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[8] RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP
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