RADIATION ANNEALING OF BORON-IMPLANTED SILICON WITH A HALOGEN LAMP

被引：76

作者：

NISHIYAMA, K

ARAI, M

WATANABE, N

机构：

来源：

关键词：

D O I：

10.1143/JJAP.19.L563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L563 / L566

页数：4

共 14 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON
AUSTON, DH
GOLOVCHENKO, JA
SMITH, PR
SURKO, CM
VENKATESAN, TNC
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541
[2] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING
AUSTON, DH
SURKO, CM
VENKATESAN, TNC
SLUSHER, RE
GOLOVCHENKO, JA
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 437 - 440
[3] LASER-SCANNING APPARATUS FOR ANNEALING OF ION-IMPLANTATION DAMAGE IN SEMICONDUCTORS
GAT, A
GIBBONS, JF
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 142 - 144
[4] GAT A, 1979, SOLID STATE TECHNOL, V22, P59
[5] PULSED ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON
INADA, T
SUGIYAMA, T
OKANO, N
ISHIKAWA, Y
[J]. ELECTRONICS LETTERS, 1980, 16 (02) : 54 - 55
[6] PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SI LAYERS
KENNEDY, EF
LAU, SS
GOLECKI, I
MAYER, JW
TSENG, W
MINNUCCI, JA
KIRKPATRICK, AR
[J]. RADIATION EFFECTS LETTERS, 1979, 43 (01): : 31 - 36
[7] LAU SS, 1979, APPL PHYS LETT, V35, P15
[8] ANNEALING OF PHOSPHORUS-ION-IMPLANTED SILICON USING A CO2-LASER
MIYAO, M
OHYU, K
TOKUYAMA, T
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (03) : 227 - 229
[9] TARGET HEATING DURING ION-IMPLANTATION
PARRY, PD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (02): : 622 - 629
[10] RATNAKUMAR KN, 1979, APPL PHYS LETT, V35, P463, DOI 10.1063/1.91170