PULSED ELECTRON-BEAM ANNEALING OF PHOSPHORUS-IMPLANTED SILICON

[1] BILLINGTON DS, 1962, RAD DAMAGE SOLIDS

[2] GIBBONS JF, 1975, PROJECTED RANGE STAT

[3] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 783 - 787

[4] PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 546 - 548

[5] DOPING PROFILES IN ZN-IMPLANTED GAAS AFTER LASER ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 6000 - 6002

[6] ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1308 - 1311

[7] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J]. ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47

[8] METASTABLE AS-75 CONCENTRATIONS FORMED BY SCANNED CW E-BEAM ANNEALING OF AS-75-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 114 - 116

[9] WHITE CW, 1978, NOV P LAS SOL INT LA

[10] Wolf H. F, 1969, SILICON SEMICONDUCTO

[1] BILLINGTON DS, 1962, RAD DAMAGE SOLIDS

[2] GIBBONS JF, 1975, PROJECTED RANGE STAT

[3] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 783 - 787

[4] PULSED ELECTRON-BEAM ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 546 - 548

[5] DOPING PROFILES IN ZN-IMPLANTED GAAS AFTER LASER ANNEALING [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 6000 - 6002

[6] ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE IN INTEGRATED-CIRCUIT DEVICES [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1308 - 1311

[7] ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON [J]. ELECTRONICS LETTERS, 1979, 15 (02) : 45 - 47

[8] METASTABLE AS-75 CONCENTRATIONS FORMED BY SCANNED CW E-BEAM ANNEALING OF AS-75-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 114 - 116

[9] WHITE CW, 1978, NOV P LAS SOL INT LA

[10] Wolf H. F, 1969, SILICON SEMICONDUCTO