DOPING PROFILES IN ZN-IMPLANTED GAAS AFTER LASER ANNEALING

被引：9

作者：

INADA, T

KATO, S

MAEDA, Y

TOKUNAGA, K

机构：

[1] College of Engineering, Hosei University, Koganei, Tokyo 184, Kajino-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 09期

关键词：

D O I：

10.1063/1.326705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Differential Hall-effect and sheet-resistivity measurements have been carried out to investigate electrical properties of p-type layers formed by implanting 100-keV Zn ions into Cr-doped semi-insulating GaAs at room temperature and by subsequent laser irradiation (Nd : YAG, λ=1.06 μm) using chemical-vapor-deposited (CVD) Si3N4 films as the encapsulant. It has been shown that very shallow (approximately 0.3 μm) and highly doped (pmax=4×1019 cm-3) p-type GaAs layers can be fabricated by Zn implantation with an ion dose of 1.0×1015 cm-2 followed by laser irradiation at a beam energy density of 1.5 J cm-2.

引用

页码：6000 / 6002

页数：3

共 15 条

[1]

BARNELS PA, 1978, P TOPICAL C CHARACTE

[2] ZINC ION-IMPLANTATION AS A PREDEPOSITION PROCESS IN GALLIUM-ARSENIDE [J].