ANNEALING OF SE-IMPLANTED GAAS WITH AN OXYGEN-FREE CVD SI3N4 ENCAPSULANT

被引：25

作者：

INADA, T ^{[1
]}

MIWA, H ^{[1
]}

KATO, S ^{[1
]}

KOBAYASHI, E ^{[1
]}

HARA, T ^{[1
]}

MIHARA, M ^{[1
]}

机构：

[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI 214,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 08期

关键词：

D O I：

10.1063/1.325472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4571 / 4573

页数：3

共 12 条

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[7]

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[8]

INADA T, UNPUBLISHED

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