METASTABLE AS-75 CONCENTRATIONS FORMED BY SCANNED CW E-BEAM ANNEALING OF AS-75-IMPLANTED SILICON

被引：23

作者：

REGOLINI, JL

SIGMON, TW

GIBBONS, JF

机构：

[1] Stanford Electronics Laboratories, Stanford

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 02期

关键词：

D O I：

10.1063/1.91060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of 75As into substitutional lattice sites in silicon in excess of 1021 cm-3 is reported. This has been accomplished by both a scanned cw e-beam and a scanned cw laser operating with dwell times in the range of milliseconds. Both electron concentration (using differential van der Pauw) and atom location measurements (using MeV ion channeling) are reported. Standard thermal processing indicates that these layers are metastable.

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页码：114 / 116

页数：3

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