REDISTRIBUTION OF DOPANTS IN ION-IMPLANTED SILICON BY PULSED-LASER ANNEALING

被引：78

作者：

WHITE, CW ^{[1
]}

CHRISTIE, WH ^{[1
]}

APPLETON, BR ^{[1
]}

WILSON, SR ^{[1
]}

PRONKO, PP ^{[1
]}

MAGEE, CW ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1063/1.90456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：662 / 664

页数：3

共 12 条

[1] ANTONENKO AK, 1976, SOV PHYS SEMICOND+, V10, P81
[2] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION
CELLER, GK
POATE, JM
KIMERLING, LC
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466
[3] FOTI G, UNPUBLISHED
[4] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
GAT, A
GIBBONS, JF
MAGEE, TJ
PENG, J
DELINE, VR
WILLIAMS, P
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
[5] KACHURIN GA, 1977, SOV PHYS SEMICOND+, V11, P350
[6] KHAIBULLIN IB, 1977, SOV PHYS SEMICOND+, V11, P190
[7] MAGEE CJ, UNPUBLISHED
[8] MAYER JW, 1977, ION BEAM HDB MATERIA, pCH2
[9] WANG JHS, UNPUBLISHED
[10] LASER ANNEALING OF BORON-IMPLANTED SILICON
YOUNG, RT
WHITE, CW
CLARK, GJ
NARAYAN, J
CHRISTIE, WH
MURAKAMI, M
KING, PW
KRAMER, SD
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 139 - 141