QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT

被引：314

作者：

FAIR, RB ^{[1
]}

TSAI, JCC ^{[1
]}

机构：

[1] BELL LABS INC,READING,PA 19604

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 07期

关键词：

D O I：

10.1149/1.2133492

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1107 / 1118

页数：12

共 68 条

[1]

ADDA LP, UNPUBLISHED

[2] ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON [J].

BACCARANI, G ;

OSTOJA, P .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :579-580

[3] THEORY OF ANOMALOUS DIFFUSION IN SOLIDS NEAR DIFFUSANT SATURATION CONCENTRATIONS - EXAMPLE-PHOSPHORUS IN SILICON [J].

BAKEMAN, PE ;

BORREGO, JM .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :688-&

[4]

BECKER WC, UNPUBLISHED

[5]

BIERDERMANN E, 1970, APPL PHYS LETT, V17, P457

[6] INTERACTION BETWEEN LOCALIZED DEFECTS IN AN ISOTROPIC ELASTIC MEDIUM [J].

BRAILSFORD, AD .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3087-+

[7] DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J].

CASEY, HC ;

PANISH, MB ;

CHANG, LL .

PHYSICAL REVIEW, 1967, 162 (03) :660-+

[8]

COLBY JW, 1974, MAY EL SOC M SAN FRA

[9]

DASH S, 1970, NBS337 SPEC PUBL, P202

[10]

DRIMER D, 1960, ACAD REP POP ROM FIL, V13, P39

← 1 2 3 4 5 6 7 →