ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON

被引：104

作者：

BACCARANI, G

OSTOJA, P

机构：

[1] UNIV BOLOGNA,FAC ENGN,IST ELECTR,40126 BOLOGNA,ITALY

[2] CNR,LAB LAMEL,40126 BOLOGNA,ITALY

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 06期

关键词：

D O I：

10.1016/0038-1101(75)90036-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：579 / 580

页数：2

共 8 条

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THOMAS, RE .

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TUFTE, ON ;

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[4] ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON [J].

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[5] RELATIONSHIP BETWEEN RESISTIVITY AND PHOSPHORUS CONCENTRATION IN SILICON [J].

MOUSTY, F ;

OSTOJA, P ;

PASSARI, L .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4576-4580

[6]

OMELYANOVSKII EM, 1963, SOV PHYS-SOL STATE, V5, P676

[7] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].

SZE, SM ;

IRVIN, JC .

SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&

[8] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J].

TANNENBAUM, E .

SOLID-STATE ELECTRONICS, 1961, 2 (2-3) :123-132

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