RELATIONSHIP BETWEEN RESISTIVITY AND PHOSPHORUS CONCENTRATION IN SILICON

[1] Brooks H., 1955, ADV ELECTRON, V7, P85

[2] TEMPERATURE COEFFICIENT OF RESISTIVITY OF SILICON AND GERMANIUM NEAR ROOM TEMPERATURE [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 639 - &

[3] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[4] LATTICE-PARAMETER STUDY OF SILICON UNIFORMLY DOPED WITH BORON AND PHOSPHORUS [J]. JOURNAL OF MATERIALS SCIENCE, 1974, 9 (05) : 821 - 828

[5] CHAPMAN PW, 1968, J APPL PHYS, V34, P3291

[6] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[7] GIRARDI F, 1969, RADIOCHEM RADIOANAL, V2, P195

[8] GIRARDI F, 1969, EUR4287E REP

[9] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[10] ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 131 - &

[1] Brooks H., 1955, ADV ELECTRON, V7, P85

[2] TEMPERATURE COEFFICIENT OF RESISTIVITY OF SILICON AND GERMANIUM NEAR ROOM TEMPERATURE [J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 639 - &

[3] CARRIER MOBILITIES IN SILICON EMPIRICALLY RELATED TO DOPING AND FIELD [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (12): : 2192 - +

[4] LATTICE-PARAMETER STUDY OF SILICON UNIFORMLY DOPED WITH BORON AND PHOSPHORUS [J]. JOURNAL OF MATERIALS SCIENCE, 1974, 9 (05) : 821 - 828

[5] CHAPMAN PW, 1968, J APPL PHYS, V34, P3291

[6] Fistul' V.I., 1969, HEAVILY DOPED SEMICO, VVolume 1

[7] GIRARDI F, 1969, RADIOCHEM RADIOANAL, V2, P195

[8] GIRARDI F, 1969, EUR4287E REP

[9] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[10] ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 131 - &