LATTICE-PARAMETER STUDY OF SILICON UNIFORMLY DOPED WITH BORON AND PHOSPHORUS

被引：91

作者：

CELOTTI, G ^{[1
]}

NOBILI, D ^{[1
]}

OSTOJA, P ^{[1
]}

机构：

[1] CNR, LAB CHIM TECNOL MAT & COMPONENTI ELETTR, VIA CASTAGNOLI 1, BOLOGNA, ITALY

来源：

关键词：

D O I：

10.1007/BF00761802

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：821 / 828

页数：8

共 49 条

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