LASER-INDUCED REACTIONS OF PLATINUM AND OTHER METAL-FILMS WITH SILICON

被引：84

作者：

POATE, JM ^{[1
]}

LEAMY, HJ ^{[1
]}

SHENG, TT ^{[1
]}

CELLER, GK ^{[1
]}

机构：

[1] WESTERN ELECT CO INC,ENGN RES CTR,PRINCETON,NJ 08540

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 11期

关键词：

D O I：

10.1063/1.90244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：918 / 920

页数：3

相关论文

共 10 条

[1] BROWN W, UNPUBLISHED
[2] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION
CELLER, GK
POATE, JM
KIMERLING, LC
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466
[3] Duwez P., 1967, T AM SOC MET, V60, P606
[4] SILICON DIODES MADE BY LASER IRRADIATION
FAIRFIELD, JM
SCHWUTTKE, GH
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (12) : 1175 - +
[5] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700
[6] PROPERTIES OF SI DIODES PREPARED BY ALLOYING AL INTO N-TYPE SI WITH HEAT PULSES FROM A ND-YAG LASER
HARPER, FE
COHEN, MI
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 1103 - +
[7] PERIODIC REGROWTH PHENOMENA PRODUCED BY LASER ANNEALING OF ION-IMPLANTED SILICON
LEAMY, HJ
ROZGONYI, GA
SHENG, TT
CELLER, GK
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (09) : 535 - 537
[8] LASER PATTERN GENERATION USING X-Y BEAM DEFLECTION
RAAMOT, J
ZALECKAS, VJ
[J]. APPLIED OPTICS, 1974, 13 (05): : 1179 - 1183
[9] TU KN, 1978, THIN FILMS INTERDIFF, pCH10
[10] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION
WILLIAMS, JS
BROWN, WL
LEAMY, HJ
POATE, JM
RODGERS, JW
ROUSSEAU, D
ROZGONYI, GA
SHELNUTT, JA
SHENG, TT
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 542 - 544