PROPERTIES OF SI DIODES PREPARED BY ALLOYING AL INTO N-TYPE SI WITH HEAT PULSES FROM A ND-YAG LASER

被引：46

作者：

HARPER, FE

COHEN, MI

机构：

来源：

SOLID-STATE ELECTRONICS | 1970年 / 13卷 / 07期

关键词：

D O I：

10.1016/0038-1101(70)90107-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1103 / +

页数：1

共 12 条

[1] LASER DAMAGE ON SEMICONDUCTOR SURFACES [J].

BERTOLOTTI, M ;

DEPASQUALE, F ;

MARIETTI, P ;

SETTE, D ;

VITALI, G .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) :4088-+

[2]

CHESTER RB, UNPUBLISHED

[3] LASER MACHINING OF THIN FILMS AND INTEGRATED CIRCUITS [J].

COHEN, MI ;

UNGER, BA ;

MILKOSKY, JF .

BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (03) :385-+

[4]

COHEN MI, 1968, ELECTRON BEAM LASER

[5] SILICON DIODES MADE BY LASER IRRADIATION [J].

FAIRFIELD, JM ;

SCHWUTTKE, GH .

SOLID-STATE ELECTRONICS, 1968, 11 (12) :1175-+

[6] A REPETITIVELY Q-SWITCHED CONTINUOUSLY PUMPED YAG.ND LASER [J].

GEUSIC, JE ;

HENSEL, ML ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1965, 6 (09) :175-&

[7] LASER OSCILLATIONS IN ND-DOPED YTTRIUM ALUMINUM YTTRIUM GALLIUM + GADOLINIUM GARNETS ( CONTINUOUS OPERATION OF Y3A15O12 PULSED OPERATION OF Y3GA5O15 + GD3GA5O12 RM TEMP E ) [J].

GEUSIC, JE ;

MARCOS, HM ;

VANUITERT, LG .

APPLIED PHYSICS LETTERS, 1964, 4 (10) :182-&

[8] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS [J].

KINGSTON, RH .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05) :829-834

[9] TRANSIENT RESPONSE OF A P-N JUNCTION [J].

LAX, B ;

NEUSTADTER, SF .

JOURNAL OF APPLIED PHYSICS, 1954, 25 (09) :1148-1154

[10] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

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