ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON

被引：41

作者：

MCMAHON, RA

AHMED, H

机构：

[1] Engineering Department, Cambridge University, Cambridge, Trumpington Street

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 02期

关键词：

Electron-beam applications; Silicon;

D O I：

10.1049/el:19790032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A scanning-electron-beam zapping system for the annealing of ion-implanted semiconductors is described. Experiments have been conducted on silicon implanted with various doses of arsenic and boron. Results show that for a given beam power full annealing is achieved above a threshold exposure. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：45 / 47

页数：3