PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SI LAYERS

被引：4

作者：

KENNEDY, EF

LAU, SS

GOLECKI, I

MAYER, JW

TSENG, W

MINNUCCI, JA

KIRKPATRICK, AR

机构：

[1] CALTECH,PASADENA,CA 91109

[2] USN,RES LAB,WASHINGTON,DC 20375

[3] SPIRE CORP,BEDFORD,MA

来源：

RADIATION EFFECTS LETTERS | 1979年 / 43卷 / 01期

关键词：

ELECTRON BEAM ANNEALING;

D O I：

10.1080/00337577908226420

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Pulsed electron beam annealing (PEBA) of ion implanted Si layers was investigated by MeV**4He** plus backscattering and TEM techniques. Silicon substrates, (100) and (111) in orientation, were implanted either with **2**8Si** plus ions or **7**5As** plus ions, and another set of samples was implanted with both ions. The implantation energy ranged between 50 and 200 keV with a total dose of 5 multiplied by 10**1**5/cm**2. It was found that electron beam annealing is effective in reordering ion-damaged layers in some cases where thermal annealing ( similar 550 degree C) is not. Pulsed electron beam annealing apparently causes melting of the surface region. The results show that the melt depth depends on the microstructure of the implanted layers.

引用

页码：31 / 36

页数：6