ANNEALING OF PHOSPHORUS-ION-IMPLANTED SILICON USING A CO2-LASER

被引：24

作者：

MIYAO, M

OHYU, K

TOKUYAMA, T

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 03期

关键词：

D O I：

10.1063/1.91079

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Annealing behavior of phosphorus implanted in silicon layers under cw CO2 laser irradiation is investigated. The irradiation time required for full electrical activation is found to depend on the dopant concentration of the substrate. This is because absorption of CO2 laser light is a function of free-carrier concentration in the crystalline substrate. During the experiment, an enhancement of annealing efficiency is observed in the case of a low-resistivity substrate or with bias light (Xe lamp) irradiation. This supports the above explanation.

引用

页码：227 / 229

页数：3

共 12 条

[1] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION
CELLER, GK
POATE, JM
KIMERLING, LC
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (08) : 464 - 466
[2] STRUCTURE OF CRYSTALLIZED LAYERS BY LASER ANNEALING OF (100) AND (111) SELF-IMPLANTED SILICON SAMPLES
FOTI, G
RIMINI, E
[J]. APPLIED PHYSICS, 1978, 15 (04): : 365 - 369
[3] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON
GAT, A
GIBBONS, JF
MAGEE, TJ
PENG, J
DELINE, VR
WILLIAMS, P
EVANS, CA
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 276 - 278
[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[5] Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153
[6] DAMAGE-DEPENDENT ELECTRICAL ACTIVATION OF ION-IMPLANTED SILICON .1. EXPERIMENTS ON PHOSPHORUS IMPLANTS
MIYAO, M
YOSHIHIRO, N
TOKUYAMA, T
MITSUISHI, T
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 223 - 230
[7] OPTICAL REFLECTIVITY STUDIES OF DAMAGE IN ION-IMPLANTED SILICON
MIYAO, M
MIYAZAKI, T
TOKUYAMA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (05) : 955 - 956
[8] MIYAO M, 1978, APPL PHYS LETT, V33, P826
[9] SPITZER W, 1959, PHYS REV, V108, P167
[10] van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

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