TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING

被引:260
作者
AUSTON, DH
SURKO, CM
VENKATESAN, TNC
SLUSHER, RE
GOLOVCHENKO, JA
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D O I
10.1063/1.90369
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O59 [应用物理学];
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页码:437 / 440
页数:4
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