RECOIL PROFILES PRODUCED BY ION-IMPLANTATION THROUGH DIELECTRIC LAYERS

被引：5

作者：

BLUNT, RT

SWEDA, R

SANDERS, IR

机构：

来源：

VACUUM | 1984年 / 34卷 / 1-2期

关键词：

D O I：

10.1016/0042-207X(84)90142-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：281 / 284

页数：4

共 8 条

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[6]

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[7] GROWTH AND CHARACTERIZATION OF LARGE DIAMETER UNDOPED SEMI-INSULATING GAAS FOR DIRECT ION-IMPLANTED FET TECHNOLOGY [J].

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[8] RECOIL IMPLANTATION OF OXYGEN FROM SIO2 THIN-FILMS ON SILICON [J].

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