COMPARISON BETWEEN ATOMIC CONCENTRATION PROFILES AND DEFECT DENSITY PROFILES IN GAAS ANNEALED AFTER IMPLANTATION WITH BERYLLIUM

被引：10

作者：

LEE, KS

ESS, JM

LITTLEJOHN, MA

BENSON, RB

COMAS, J

机构：

[1] N CAROLINA STATE UNIV, RALEIGH, NC 27650 USA

[2] USN, RES LAB, WASHINGTON, DC 20375 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1980年 / 9卷 / 01期

关键词：

D O I：

10.1007/BF02655223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：185 / 196

页数：12

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