DEPTH DISTRIBUTION OF ENERGY DEPOSITION BY ION-BOMBARDMENT

[1] [Anonymous], 1963, KGL DANSKE VIDENSKAB

[2] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 943 - &

[3] Doran D. G., 1971, Radiation Effects, V9, P283, DOI 10.1080/00337577108231062

[4] JOHNSON WS, 1969, PROJECTED RANGE STAT

[5] JOHNSON WS, 1970, DISCREPANCY CALCULAT

[6] Kulcinski G. L., 1971, Radiation Effects, V7, P195, DOI 10.1080/00337577108230988

[7] Lindhard J., 1968, K DAN VIDENSK SELSK, V36, P10

[8] LINDHARD J, 1963, DANSKE VIDENSKAB SEL, V33

[9] LINHARD J, 1963, DANSKE VINDENSKAB SE, V33, P10

[10] MANNING I, TO BE PUBLISHED

[1] [Anonymous], 1963, KGL DANSKE VIDENSKAB

[2] INFLUENCE OF AMORPHOUS PHASE ON ION DISTRIBUTIONS AND ANNEALING BEHAVIOR OF GROUP III AND GROUP V IONS IMPLANTED INTO SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) : 943 - &

[3] Doran D. G., 1971, Radiation Effects, V9, P283, DOI 10.1080/00337577108231062

[4] JOHNSON WS, 1969, PROJECTED RANGE STAT

[5] JOHNSON WS, 1970, DISCREPANCY CALCULAT

[6] Kulcinski G. L., 1971, Radiation Effects, V7, P195, DOI 10.1080/00337577108230988

[7] Lindhard J., 1968, K DAN VIDENSK SELSK, V36, P10

[8] LINDHARD J, 1963, DANSKE VIDENSKAB SEL, V33

[9] LINHARD J, 1963, DANSKE VINDENSKAB SE, V33, P10

[10] MANNING I, TO BE PUBLISHED