ION-IMPLANTATION DAMAGE IN GAAS - TEM STUDY OF VARIATION WITH ION SPECIES AND STOICHIOMETRY

被引：7

作者：

ELLIOTT, CR

AMBRIDGE, T

HECKINGBOTTOM, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1978年 / 21卷 / 06期

关键词：

D O I：

10.1016/0038-1101(78)90310-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：859 / 863

页数：5

共 16 条

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HECKINGBOTTOM, R ;

BELL, EC ;

SEALY, BJ ;

STEPHENS, KG ;

SURRIDGE, RK .

ELECTRONICS LETTERS, 1975, 11 (15) :314-315

[2]

AMBRIDGE T, UNPUBLISHED

[3]

Bicknell R. W., 1970, Radiation Effects, V6, P45, DOI 10.1080/00337577008235044

[4]

DONNELLY JP, 1977, I PHYS C SERIES, P166

[5]

DRISCOLL CMH, 1973, I PHYS C SERIES, P377

[6]

Heckingbottom R., 1973, RADIAT EFF, V17, P31

[7]

HURLE DTJ, 1977, I PHYS C SER, P113

[8] INTERSTITIAL CONDENSATION IN N+ GAAS [J].

HUTCHINSON, PW ;

DOBSON, PS .

JOURNAL OF MATERIALS SCIENCE, 1975, 10 (09) :1636-1641

[9] OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS [J].

HWANG, CJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4584-&

[10] CALCULATIONS OF POINT DEFECT CONCENTRATIONS AND NONSTOICHIOMETRY IN GAAS [J].

LOGAN, RM ;

HURLE, DTJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (08) :1739-&

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